O le vailaʻau vailaʻau o le paʻu carbide silicon e masani ona aofia ai elemene e lua, Si ma C, lea o le fua faatatau o Si ma C o le 1:1.E le gata i lea, o le silicon carbide e mafai ona aofia ai se vaega itiiti o isi elemene, e pei o Al, B, P, ma isi mea, o mea o loʻo i ai nei elemene o le ai ai se aafiaga patino i le faʻatinoga o le carbide silicon.Silicon carbide paʻu o loʻo i ai le tele o faʻaoga i le tele o faʻalapotopotoga, e pei o le eletise, malosiaga, aerospace, taʻavale ma isi.I le tulaga o mea tau eletise, e mafai ona faʻaaogaina le paʻu o le silicon carbide e gaosia ai masini semiconductor, vaega eletise, ma isi. , e mafai ona faʻaaogaina le paʻu paʻu silicon carbide e gaosia ai mea faʻapipiʻi maualuga-vevela, masini avionics, ma isi.
silicon carbide sic pa'u fa'amatalaga mo mea e le fa'apalapala | ||||
Ituaiga | Fa'asinoga vaila'au tu'ufa'atasi (%) | Tele(mm) | ||
SiC | FC | Fe2O3 | ||
TN98 | ≥98.00 | <1.00 | <0.50 | 50~0 |
TN97 | ≥97.00 | <1.50 | <0.80 | 13~0 |
TN95 | ≥95.00 | <2.50 | <1.00 | 10~0 |
TN90 | ≥90.00 | <3.00 | <2.50 | 5~0 |
TN88 | ≥88.00 | <3.50 | <3.00 | 0.5~0 |
TN85 | ≥85.00 | <5.00 | <3.50 | 100F |
TN60 | ≥60.00 | <12.00 | <3.50 | 200F |
TN50 | ≥50.00 | <15.00 | <3.50 | 325F |
Huarui o loʻo i ai faiga faʻapitoa tau pulega.Matou te suʻesuʻeina muamua a matou oloa pe a maeʻa a matou gaosiga, ma matou toe faʻataʻitaʻi aʻo leʻi tuʻuina atu uma, e oʻo lava i faʻataʻitaʻiga.Ma afai e te manaʻomia, matou te manaʻo e talia isi vaega e suʻe.Ioe pe afai e te fiafia i ai, e mafai ona matou tuʻuina atu faʻataʻitaʻiga ia oe e suʻe ai.
O a matou oloa lelei e faʻamaonia e Sichuan Metallurgical Institute ma Guangzhou Institute of Metal Research.O le galulue faʻatasi ma i latou e mafai ona faʻasaoina le tele o taimi suʻega mo tagata faʻatau.